The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Aug. 31, 2015
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 31/103 (2006.01); H01L 31/0216 (2014.01); H01L 31/02 (2006.01); H01L 31/028 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 31/103 (2013.01); H01L 27/1469 (2013.01); H01L 27/14629 (2013.01); H01L 27/14634 (2013.01); H01L 27/14636 (2013.01); H01L 27/14647 (2013.01); H01L 31/02005 (2013.01); H01L 31/028 (2013.01); H01L 31/02161 (2013.01); H01L 31/02327 (2013.01);
Abstract
According to a photodetector includes a first light detection layer and a reflective layer. The first light detection layer has a first surface and a second surface on a side opposite to the first surface. The first light detection layer includes a first light detection area including a p-n junction of a p-type semiconductor layer containing Si and an n-type semiconductor layer containing Si. The reflective layer arranged on a second surface side of the first light detection layer so as to be opposed to the first light detection area. The reflective layer reflects at least part of light in a near-infrared range.