The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Jun. 23, 2015
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Hajime Sasaki, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/324 (2006.01); H01L 21/8252 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 21/324 (2013.01); H01L 29/7786 (2013.01); H01L 29/2003 (2013.01);
Abstract
A method of manufacturing a nitride semiconductor device includes: forming a transistor having a gate electrode Schottky-joined to a nitride semiconductor layer; performing high-temperature annealing at a temperature of 200 to 360° C. for 8 to 240 hours on the transistor; and after the high-temperature annealing, performing RF burn-in by applying radiofrequency power to the transistor at a channel temperature of 180 to 360° C.