The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Jul. 25, 2014
Applicants:
Imec Vzw, Leuven, BE;
Katholieke Universiteit Leuven, Ku Leuven R&d, Leuven, BE;
Inventors:
Han Chung Lin, Leuven, BE;
Laura Nyns, Paal, BE;
Tsvetan Ivanov, Heverlee, BE;
Dennis Van Dorp, Hannut, BE;
Assignees:
IMEC VZW, Leuven, BE;
Katholieke Universiteit Leuven, KU Leuven R&D, Leuven, BE;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/513 (2013.01); H01L 21/02192 (2013.01); H01L 21/28264 (2013.01); H01L 29/2003 (2013.01); H01L 29/517 (2013.01); H01L 21/02172 (2013.01); H01L 21/02178 (2013.01); H01L 29/20 (2013.01);
Abstract
A semiconductor structure comprises a substrate including a III-V material, and a high-k interfacial layer overlaying the substrate. The interfacial layer includes a rare earth aluminate. The present disclosure also relates to an n-type FET device comprising the same, and a method for manufacturing the same.