The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Dec. 18, 2015
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Stmicroelectronics SA, Montrouge, FR;
Pierre Caubet, Le Versoud, FR;
Florian Domengie, Crolles, FR;
Carlos Augusto Suarez Segovia, Grenoble, FR;
Aurelie Bajolet, Biviers, FR;
Onintza Ros Bengoechea, Grenoble, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
STMicroelectronics SA, Montrouge, FR;
Abstract
Local variability of the grain size of work function metal, as well as its crystal orientation, induces a variable work function and local variability of transistor threshold voltage. If the metal nitride for the work function metal of the transistor gate is deposited using a radio frequency physical vapor deposition, equiaxed grains are produced. The substantially equiaxed structure for the metal nitride work function metal layer (such as with TiN) reduces local variability in threshold voltage.