The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Aug. 17, 2016
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Kazutaka Takagi, Kawasaki, JP;
Kabushiki Kaishi Toshiba, Minato-ku, JP;
Abstract
A high frequency semiconductor device includes a stacked body, a gate electrode, a source electrode and a drain electrode. The gate electrode includes a bending gate part and a straight gate part. The bending gate part is extended in a zigzag shape and has first and second outer edges. The source electrode includes a bending source part and a straight source part. The bending source part has an outer edge spaced by a first distance from the first outer edge of the bending gate part along a normal direction. The drain electrode includes a bending drain part and a straight drain part. The bending drain part has an outer edge spaced by a second distance from the second outer edge of the bending gate part along the normal direction.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile