The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Jan. 07, 2014
Applicant:
Mitsubishi Electric Research Laboratories, Inc., Cambridge, MA (US);
Inventors:
Andrei Kniazev, Cambridge, MA (US);
Qun Gao, Gainesville, FL (US);
Koon Hoo Teo, Lexington, MA (US);
Assignee:
Mitsubishi Electric Research Laboratories, Inc., Cambridge, MA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/66 (2006.01); H01L 29/778 (2006.01); G01R 31/26 (2014.01); G01R 31/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); G01R 31/2642 (2013.01); G01R 31/2894 (2013.01); H01L 22/14 (2013.01); H01L 29/778 (2013.01);
Abstract
A method analyzes traps in a semiconductor device by determining a first-order derivative of a signal representing an operation of the semiconductor device over time to produce a signal rate change. The traps in the semiconductor device are analyzed based on lifetimes corresponding to peaks of the signal rate change.