The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Aug. 26, 2015
Kabushiki Kaisha Toshiba, Tokyo, JP;
Shinya Sato, Nonoichi Ishikawa, JP;
Tomoyuki Sakuma, Nonoichi Ishikawa, JP;
Noboru Yokoyama, Kanazawa Ishikawa, JP;
Shizue Matsuda, Kanazawa Ishikawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes first semiconductor regions of a first conductivity type spaced apart from each other and second semiconductor regions of a second conductivity type between adjacent first semiconductor regions. At least one second semiconductor region includes a void having at least one outer surface with a crystal plane orientation of (100). A third semiconductor region of the second conductivity type is on each second semiconductor region and a fourth semiconductor region of the first conductivity type is on the third semiconductor region. A gate electrode on is disposed on each first semiconductor region to be adjacent to a third semiconductor region via a gate insulation layer.