The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Oct. 01, 2013
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Martin Mandl, Lappersdorf, DE;
Martin Strassburg, Donaustauf, DE;
Christopher Koelper, Regensburg, DE;
Alexander F. Pfeuffer, Regensburg, DE;
Patrick Rode, Regensburg, DE;
OSRAM OPTO SEMICONDUCTORS GMBH, Regensburg, DE;
Abstract
In at least one embodiment of the method, said method includes the following steps: A) producing radiation-active islands () having a semiconductor layer sequence () on a growth substrate (), wherein the islands () each comprise at least one active zone () of the semiconductor layer sequence (), and an average diameter of the islands (), as viewed in a top view of the growth substrate, amounts to between 50 nm and 10 μm inclusive, B) producing a separating layer () on a side of the islands () facing the growth substrate (), wherein the separating layer () surrounds the islands () all around, as viewed in a top view of the growth substrate (), C) attaching a carrier substrate () to a side of the islands () facing away from the growth substrate (), and D) detaching the growth substrate () from the islands (), wherein at least a part of the separating layer () is destroyed and/or at least temporarily softened during the detachment.