The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Mar. 06, 2015
Applicant:
Seiko Epson Corporation, Shinjuku-ku, JP;
Inventors:
Akira Uematsu, Suwa, JP;
Atsushi Matsuo, Azumino, JP;
Assignee:
Seiko Epson Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14632 (2013.01); H01L 27/1462 (2013.01); H01L 27/14621 (2013.01); H01L 27/14625 (2013.01); H01L 27/14636 (2013.01); H01L 27/14685 (2013.01); H01L 27/14687 (2013.01);
Abstract
A semiconductor wafer includes a semiconductor substrate, a dielectric multilayer film formed on the semiconductor substrate and serving as an optical filter on a light receiving sensor, and a light detection region formed in the semiconductor substrate, with the Poisson ratio VS, Young's modulus ES, the radius r, and the thickness b of the semiconductor substrate, stress σ in the dielectric multilayer film, and the thickness d of the dielectric multilayer film satisfy a relationship 1.0×10≧{3×r×d×(1−VS)×σ}/(ES×b).