The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2017

Filed:

Feb. 05, 2015
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventor:

Shoichi Miyazaki, Yokkaichi Mie, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 27/11524 (2017.01); H01L 29/66 (2006.01); H01L 27/11529 (2017.01); H01L 29/788 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11524 (2013.01); H01L 21/28282 (2013.01); H01L 27/11529 (2013.01); H01L 29/42324 (2013.01); H01L 29/66825 (2013.01); H01L 29/788 (2013.01);
Abstract

A semiconductor memory device includes a semiconductor substrate, a first insulating film disposed on the semiconductor substrate, a first conductive film disposed on the first insulating film, a second insulating film disposed on the first conductive film, a second conductive film disposed on the second insulating film, a first electrode disposed on the first conductive film through an opening formed in the second conductive film and the second insulating film, and having a first width, a second electrode that is formed on the first electrode and having a second width, and a wiring layer that is formed on the second electrode. A first width of the first electrode is wider than a second width of the second electrode.


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