The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Feb. 05, 2016
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Shinsuke Watanabe, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/10 (2006.01); H01L 27/07 (2006.01); H01L 23/535 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 23/482 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0727 (2013.01); H01L 23/482 (2013.01); H01L 23/4824 (2013.01); H01L 23/535 (2013.01); H01L 29/0619 (2013.01); H01L 29/41758 (2013.01); H01L 29/41775 (2013.01); H01L 2224/4912 (2013.01); H01L 2224/49175 (2013.01);
Abstract
A transistor includes: a semiconductor substrate; a plurality of gate electrodes, a plurality of source electrodes, and a plurality of drain electrodes on the semiconductor substrate; a drain pad on the semiconductor substrate and connected to the plurality of drain electrodes; a metal wiring on the semiconductor substrate and arranged spaced apart from, adjacent to and parallel to the drain pad; and a ground pad on the semiconductor substrate and connected to both ends of the metal wiring.