The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2017

Filed:

Sep. 10, 2014
Applicant:

Dexerials Corporation, Tokyo, JP;

Inventor:

Taichi Koyama, Tochigi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/29 (2006.01); H01L 21/56 (2006.01); C08J 5/18 (2006.01); C09J 133/04 (2006.01); C09J 163/08 (2006.01); H01L 23/00 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 23/293 (2013.01); C08J 5/18 (2013.01); C09J 133/04 (2013.01); C09J 163/08 (2013.01); H01L 21/563 (2013.01); H01L 21/6836 (2013.01); H01L 24/81 (2013.01); C08J 2333/16 (2013.01); C08J 2363/02 (2013.01); C08J 2433/16 (2013.01); C08J 2463/02 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68377 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73104 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/83191 (2013.01); H01L 2924/00011 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/06 (2013.01); H01L 2924/0635 (2013.01); H01L 2924/0665 (2013.01); H01L 2924/186 (2013.01); H01L 2924/20102 (2013.01); H01L 2924/20103 (2013.01); H01L 2924/20104 (2013.01);
Abstract

An underfill material enabling voidless packaging and excellent solder bonding properties, and a method for manufacturing a semiconductor device using the same are provided. An underfill material, including an epoxy resin, an acid anhydride, an acrylic resin, and an organic peroxide, the minimum melt viscosity being between 1000 Pa*s and 2000 Pa*s, and gradient of melt viscosity between 10° C. higher than the minimum melt viscosity attainment temperature and a temperature 10° C. higher being between 900 Pa*s/° C. and 3100 Pa*s/° C., is applied to a semiconductor chip having a solder-tipped electrode formed thereon, and the semiconductor chip is mounted onto a circuit substrate having a counter electrode opposing the solder-tipped electrode, and the semiconductor chip and the circuit substrate are thermocompressed under bonding conditions of raising the temperature from a first temperature to a second temperature at a predetermined rate.


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