The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2017

Filed:

Dec. 09, 2015
Applicant:

Samsung Electronics Co., Ltd, Suwon-Si, Gyeonggi-do, KR;

Inventors:

Chan-Sic Yoon, Anyang-si, KR;

Jiung Pak, Suwon-si, KR;

Kiseok Lee, Busan, KR;

Chan Ho Park, Incheon, KR;

Hyeonok Jung, Daejeon, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3088 (2013.01); H01L 21/3086 (2013.01); H01L 27/10814 (2013.01); H01L 27/10876 (2013.01);
Abstract

A method of fabricating a semiconductor device includes forming a linear preliminary mask pattern in a first direction on a substrate. The preliminary mask pattern is patterned to provide a plurality of mask patterns that are aligned end-to-end with one another on the substrate and are separated by an exposed portion of the substrate between respective facing ends of the plurality of mask patterns. An auxiliary layer is formed to cover at least sidewalls of the facing ends to reduce a size of the exposed portion to provide a reduced exposed portion of the substrate and the reduced exposed portion of the substrate is etched to form a trench defining active patterns in the substrate aligned end-to-end with one another.


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