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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9691620 B1

PDFFull Text
Date of Patent:
Jun. 27, 2017

Filed:

Apr. 18, 2013

Semiconductor structure having film including germanium oxide on germanium layer and method of fabricating the same

Applicant:

Japan Science and Technology Agency, Kawaguchi-shi, Saitama, JP;

Inventors:

Akira Toriumi, Tokyo, JP;

Choong-hyun Lee, Tokyo, JP;

Assignee:

Japan Science and Technology Agency, Kawaguchi-shi, JP;

Attorney:

Amster, Rothstein & Ebenstein LLP

Primary Examiner:

Dzung Tran

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 23/58 (2006.01); H01L 21/31 (2006.01); H01L 21/28 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28255 (2013.01); H01L 21/022 (2013.01); H01L 21/02112 (2013.01); H01L 21/02175 (2013.01); H01L 21/02236 (2013.01); H01L 21/02255 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/78 (2013.01); H01L 29/16 (2013.01);
Abstract

A semiconductor structure includes: a germanium layer; and an insulating film that has a filmthat includes a germanium oxide and is formed on the germanium layer and a high dielectric oxide filmthat is formed on the film including the germanium oxide and has a dielectric constant higher than that of a silicon oxide, wherein: an EOT of the insulating film is 2 nm or less; and on a presumption that an Au acting as a metal film is formed on the insulating film, a leak current density is 10A/cmor less in a case where a voltage of the metal film with respect to the germanium layer is applied from a flat band voltage to an accumulation region side by 1 V.

Find Patent Forward Citations

Toriumi, Akira. (2017). Semiconductor structure having film including germanium oxide on germanium layer and method of fabricating the same (U.S. Patent No. 9691620). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9691620

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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