The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Aug. 05, 2014
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Taku Horii, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
A method of manufacturing a silicon carbide semiconductor device includes a step of preparing a silicon carbide substrate having a first main surface and a second main surface located opposite to the first main surface, a step of forming a doped region in the silicon carbide substrate by doping the first main surface with an impurity, a step of forming a first protecting film on the first main surface, and a step of forming a second protecting film on the second main surface, the step of forming a first protecting film being performed after the step of forming a doped region, the method further including a step of activating the impurity included in the doped region by annealing with at least a portion of the first main surface covered with the first protecting film and at least a portion of the second main surface covered with the second protecting film.