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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9691609 B1

PDFFull Text
Date of Patent:
Jun. 27, 2017

Filed:

Dec. 02, 2016

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Atsushi Moriya, Toyama, JP;

Naoharu Nakaiso, Toyama, JP;

Yugo Orihashi, Toyama, JP;

Kotaro Murakami, Toyama, JP;

Assignee:

HITACHI KOKUSAI ELECTRIC INC., Tokyo, JP;

Attorney:

Volpe and Koenig, P.C.

Primary Examiner:

Caleb Henry

Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/02 (2006.01); C23C 16/24 (2006.01); C23C 16/455 (2006.01); C30B 25/04 (2006.01); C30B 25/18 (2006.01); C30B 25/16 (2006.01); C30B 25/20 (2006.01); C30B 29/06 (2006.01); H01L 21/324 (2006.01); H01L 27/108 (2006.01); H01L 27/06 (2006.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 21/02532 (2013.01); C23C 16/24 (2013.01); C23C 16/45523 (2013.01); C30B 25/04 (2013.01); C30B 25/165 (2013.01); C30B 25/186 (2013.01); C30B 25/20 (2013.01); C30B 29/06 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02428 (2013.01); H01L 21/02592 (2013.01); H01L 21/02595 (2013.01); H01L 21/02634 (2013.01); H01L 21/02694 (2013.01); H01L 21/324 (2013.01); H01L 27/0688 (2013.01); H01L 27/10805 (2013.01); H01L 27/10873 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes alternately performing supplying a first process gas containing silicon and a halogen element to a substrate having a surface on which monocrystalline silicon and an insulation film are exposed and supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing silicon to the substrate, whereby a first silicon film is homo-epitaxially grown on the monocrystalline silicon and a second silicon film differing in crystal structure from the first silicon film is grown on the insulation film.

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