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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9691608 B1

PDFFull Text
Date of Patent:
Jun. 27, 2017

Filed:

Apr. 03, 2014

Silicon carbide substrate, silicon carbide semiconductor device, and methods for manufacturing silicon carbide substrate and silicon carbide semiconductor device

Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Inventors:

So Tanaka, Osaka, JP;

Shunsuke Yamada, Osaka, JP;

Taku Horii, Osaka, JP;

Akira Matsushima, Itami, JP;

Ryosuke Kubota, Osaka, JP;

Kyoko Okita, Itami, JP;

Takayuki Nishiura, Itami, JP;

Assignee:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Attorneys:

Venable LLP

Michael A. Sartori

Laura G. Remus

Primary Examiner:

Nikolay Yushin

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/00 (2006.01); C30B 25/20 (2006.01); C30B 29/36 (2006.01); H01L 21/02 (2006.01); C30B 25/18 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 21/3065 (2006.01); H01L 23/31 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02529 (2013.01); C30B 25/18 (2013.01); C30B 25/20 (2013.01); C30B 29/36 (2013.01); H01L 21/02164 (2013.01); H01L 21/02271 (2013.01); H01L 21/02378 (2013.01); H01L 21/02598 (2013.01); H01L 21/02636 (2013.01); H01L 21/3065 (2013.01); H01L 29/0657 (2013.01); H01L 29/1608 (2013.01); H01L 23/3185 (2013.01); H01L 29/045 (2013.01); H01L 29/66068 (2013.01); H01L 29/7813 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method for manufacturing a silicon carbide substrate includes the following steps. There is prepared a silicon carbide single crystal substrate having a first main surface, a second main surface, and a first side end portion, the second main surface being opposite to the first main surface, the first side end portion connecting the first main surface and the second main surface to each other, the first main surface having a width with a maximum value of more than 100 mm. A silicon carbide epitaxial layer is formed in contact with the first side end portion, the first main surface, and a boundary between the first main surface and the first side end portion. The silicon carbide epitaxial layer formed in contact with the first side end portion and the boundary is removed.

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