The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Sep. 27, 2013
Applicant:
Showa Denko K.k., Tokyo, JP;
Inventors:
Kazumi Naito, Tokyo, JP;
Shoji Yabe, Tokyo, JP;
Assignee:
SHOWA DENKO K.K., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 9/052 (2006.01); B22F 3/12 (2006.01); B22F 7/02 (2006.01); B22F 9/04 (2006.01); C22C 1/00 (2006.01); C22C 32/00 (2006.01); H01G 9/15 (2006.01);
U.S. Cl.
CPC ...
H01G 9/0525 (2013.01); B22F 3/12 (2013.01); B22F 7/02 (2013.01); B22F 9/04 (2013.01); C22C 1/00 (2013.01); C22C 32/0078 (2013.01); H01G 9/052 (2013.01); B22F 2998/10 (2013.01); B22F 2999/00 (2013.01); H01G 9/15 (2013.01);
Abstract
A method for producing an anode body in a capacitor, which includes making a molded body by molding a tungsten powder and making an anode body by sintering the molded body, which includes a step of bringing the tungsten powder or the molded body thereof into contact with a solution of a silicon compound before sintering the molded body so as to adjust the silicon content in the anode body to 0.05 to 7 mass %.