The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Feb. 12, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Eun Chu Oh, Hwaseong-si, KR;
Jun Jin Kong, Yongin-si, KR;
Young Bae Kim, Seoul, KR;
Hong Rak Son, Anyang-si, KR;
Pil Sang Yoon, Hwaseong-si, KR;
Han Shin Shin, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A resistive memory system having a plurality of memory cells includes a memory device having a resistive memory cell array and a controller. The controller generates write data to be written to the memory cell array by encoding input data such that the input data corresponds to an erase state and a plurality of programming states that a memory cell may have. The input data is encoded such that at least one of the number of memory cells assigned a first programming state and the number of memory cells assigned a second programming state is smaller than at least one of the numbers of memory cells in the erase state and the other programming states. The first programming state has a highest resistance level among the plurality of programming states, and the second programming state has a second highest resistance level among the plurality of programming states.