The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2017

Filed:

Aug. 20, 2015
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Kosuke Tatsumura, Kanagawa, JP;

Mari Matsumoto, Kanagawa, JP;

Masato Oda, Kanagawa, JP;

Koichiro Zaitsu, Kanagawa, JP;

Shinichi Yasuda, Japan, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 11/16 (2006.01); H03K 19/177 (2006.01); G11C 14/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 11/16 (2013.01); G11C 13/0002 (2013.01); G11C 13/003 (2013.01); G11C 13/0004 (2013.01); G11C 13/0023 (2013.01); G11C 13/0069 (2013.01); G11C 14/009 (2013.01); H03K 19/1776 (2013.01); G11C 2213/78 (2013.01);
Abstract

According to one embodiment, an integrated circuit includes first and second data lines, a first memory cell includes first and second resistance changing elements connected in series between the first and second data lines and a first selection transistor including a drain connected to a connection node of the first and second resistance changing elements, and a second memory cell includes third and fourth resistance changing elements connected in series between the first and second data lines and a second selection transistor including a drain connected to a connection node of the third and fourth resistance changing elements.


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