The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2017

Filed:

Apr. 30, 2015
Applicant:

Bar-ilan University, Ramat-Gan, IL;

Inventors:

Robert Giterman, Beer-Sheva, IL;

Adam Teman, Lausanne, CH;

Pascal Meinerzhagen, Hillsboro, OR (US);

Andreas Burg, Ecublens, CH;

Alexander Fish, Tel-Mond, IL;

Assignee:

Bar-Ilan University, Ramat-Gan, IL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); G11C 7/10 (2006.01); G11C 11/4097 (2006.01); G11C 11/412 (2006.01); G11C 5/02 (2006.01); H01L 27/11 (2006.01);
U.S. Cl.
CPC ...
G11C 7/10 (2013.01); G11C 5/025 (2013.01); G11C 5/06 (2013.01); G11C 11/4097 (2013.01); G11C 11/412 (2013.01); H01L 27/11 (2013.01); H01L 27/1104 (2013.01);
Abstract

A gain cell includes a write bit line input, a read bit line output, a write trigger input and a read trigger input. The gain cell also includes a write transistor, retention element and read transistor. Each of the transistors includes a respective first diffusion connection, gate connection and second diffusion connection. The write transistor first diffusion connection is connected to the write bit line input and the write transistor gate connection is connected to the write trigger input. The read transistor first diffusion connection being connected to the read bit line output and the second diffusion connection is connected to the read trigger input. The retention element buffers between write transistor and the read transistor during data retention. The retention element also connects or disconnects a write transistor diffusion connection to/from a constant voltage in accordance with a retained data level at the read transistor gate connection.


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