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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9690971 B1

PDFFull Text
Date of Patent:
Jun. 27, 2017

Filed:

Aug. 08, 2016

Photo-sensing unit, photo-sensing apparatus, and method for fabricating photo-sensing unit

Applicant:

AU Optronics Corporation, Hsin-Chu, TW;

Inventors:

Yi-Huan Liao, Hsin-Chu, TW;

Chih-Hao Lin, Hsin-Chu, TW;

Jhen-Yu You, Hsin-Chu, TW;

Jhen-Fu Cho, Hsin-Chu, TW;

Chun Chang, Hsin-Chu, TW;

An-Thung Cho, Hsin-Chu, TW;

Assignee:

AU OPTRONICS CORPORATION, Hsin-Chu, TW;

Attorneys:

WPAT, PC

Justin King

Primary Examiner:

Tram H Nguyen

Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 29/04 (2006.01); H01L 29/15 (2006.01); H01L 31/036 (2006.01); G06K 9/00 (2006.01); H01L 31/032 (2006.01); H01L 31/109 (2006.01); H01L 27/146 (2006.01); H01L 31/16 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
G06K 9/0004 (2013.01); H01L 27/14609 (2013.01); H01L 27/14612 (2013.01); H01L 27/14623 (2013.01); H01L 27/14636 (2013.01); H01L 27/14683 (2013.01); H01L 31/032 (2013.01); H01L 31/109 (2013.01); H01L 31/165 (2013.01); H01L 31/18 (2013.01);
Abstract

A photo-sensing unit including a first electrode, a first insulation layer, a photo-sensing structure and a second electrode is provided. The first insulation layer covers the first electrode and has an opening exposing the first electrode. The photo-sensing structure is located on the first electrode and disposed in the opening of the first insulation layer. The photo-sensing structure includes a first photo-sensing layer and a second photo-sensing layer stacked with each other. A material of the first photo-sensing layer is SiGeO. A material of the second photo-sensing layer is SiO. The second electrode covers the photo-sensing structure. A photo-sensing apparatus including the photo-sensing unit and a fabricating method of a photo-sensing unit are also provided.

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