The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2017

Filed:

Dec. 28, 2015
Applicants:

Hyery NO, Seoul, KR;

Sangkwon Moon, Osan-si, KR;

Suejin Kim, Bucheon-si, KR;

Heewon Lee, Suwon-si, KR;

Inventors:

Hyery No, Seoul, KR;

Sangkwon Moon, Osan-si, KR;

Suejin Kim, Bucheon-si, KR;

Heewon Lee, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G06F 11/10 (2006.01); G06F 3/06 (2006.01); G11C 29/52 (2006.01); G11C 29/42 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1068 (2013.01); G06F 3/0604 (2013.01); G06F 3/064 (2013.01); G06F 3/0619 (2013.01); G06F 3/0679 (2013.01); G06F 11/1048 (2013.01); G11C 29/42 (2013.01); G11C 29/52 (2013.01); G11C 11/5642 (2013.01);
Abstract

A nonvolatile memory system includes a nonvolatile memory device and a memory controller managing the nonvolatile memory device. The operation method includes receiving a read command and a read address from an external device, reading read data stored in memory cells connected to a selected word line of a selected memory block corresponding to the read address in response to the read command, and detecting and correcting error bits of the read data. The method includes estimating the number of error bits of unselected word lines on the basis of erase leaving times of memory cells connected to the unselected word lines of the selected memory block and the detected error bits, and performing read-reclaim operation on at least one word line among the selected word line and the unselected word lines on the basis of the estimated number of error bits.


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