The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2017

Filed:

Feb. 28, 2014
Applicant:

National Institute of Advanced Industrial Science and Technology, Tokyo, JP;

Inventors:

Toshihiro Kamei, Ibaraki, JP;

Ryohei Takei, Ibaraki, JP;

Masahiko Mori, Ibaraki, JP;

Youichi Sakakibara, Ibaraki, JP;

Makoto Okano, Ibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/035 (2006.01); G02F 1/025 (2006.01); G02F 1/225 (2006.01); G02F 1/015 (2006.01); G02F 1/21 (2006.01);
U.S. Cl.
CPC ...
G02F 1/025 (2013.01); G02F 1/2257 (2013.01); G02F 2001/0151 (2013.01); G02F 2001/212 (2013.01); G02F 2202/103 (2013.01); G02F 2202/105 (2013.01);
Abstract

An optical semiconductor device in which a first optical waveguidecomprising a silicon-containing amorphous semiconductor layer and a second optical waveguidecontaining a silicon-containing i-type semiconductor layer as a constituent element are disposed in different layers in a range in which optical interaction can occur. An electro-optical modulatorhaving a pin junction structure comprising a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layeris provided to at least a portion of the second optical waveguide, and the index of refraction of the second optical waveguide is varied by the electro-optical modulator, whereby light waves propagated through the first optical waveguide are modulated.


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