The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2017

Filed:

Jan. 22, 2015
Applicant:

Ut-battelle Llc, Oak Ridge, TN (US);

Inventors:

Danny J. King, Ann Arbor, MI (US);

Susan Babinec, Midland, MI (US);

Patrick L. Hagans, Cleveland Heights, OH (US);

Lonnie C. Maxey, Powell, TN (US);

Edward A. Payzant, Oak Ridge, TN (US);

Claus Daniel, Knoxville, TN (US);

Adrian S. Sabau, Knoxville, TN (US);

Ralph B. Dinwiddie, Knoxville, TN (US);

Beth L. Armstrong, Oak Ridge, TN (US);

Jane Y. Howe, Oak Ridge, TN (US);

David L. Wood, III, Knoxville, TN (US);

Nicole S. Nembhard, Richmond, IN (US);

Assignee:

UT-Battelle, LLC, Oak Ridge, TN (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 27/00 (2006.01); G01N 27/22 (2006.01); G01N 27/24 (2006.01);
U.S. Cl.
CPC ...
G01N 27/221 (2013.01); G01N 27/24 (2013.01);
Abstract

A system and a method for characterizing a dielectric material are provided. The system and method generally include applying an excitation signal to electrodes on opposing sides of the dielectric material to evaluate a property of the dielectric material. The method can further include measuring the capacitive impedance across the dielectric material, and determining a variation in the capacitive impedance with respect to either or both of a time domain and a frequency domain. The measured property can include pore size and surface imperfections. The method can still further include modifying a processing parameter as the dielectric material is formed in response to the detected variations in the capacitive impedance, which can correspond to a non-uniformity in the dielectric material.


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