The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Dec. 16, 2015
Fujifilm Corporation, Tokyo, JP;
Takahiro Sano, Kanagawa, JP;
Takayuki Naono, Kanagawa, JP;
FUJIFILM Corporation, Tokyo, JP;
Abstract
A producing method for a diaphragm-type resonant MEMS device includes forming a first silicon oxide film, forming a second silicon oxide film, forming a lower electrode, forming a piezoelectric film, forming an upper electrode, laminating the first silicon oxide film, the second silicon oxide film, the lower electrode, the piezoelectric film, and the upper electrode in this order on a first surface of a silicon substrate, and etching the opposite side surface of the first surface of the silicon substrate by deep reactive ion etching to form a diaphragm structure, in which the proportion Rof the film thickness tof the second silicon oxide film with respect to the sum of the film thickness tof the first silicon oxide film and the film thickness tof the second silicon oxide film satisfies the following condition:0.10 μm≦≦2.00 μm; and≧0.70.