The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Sep. 11, 2015
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Raminda Madurawe, Sunnyvale, CA (US);
William George Gazeley, Corvallis, OR (US);
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Abstract
An image sensor with an array of pixels is provided. To minimize optical and electrical and crosstalk, the array of pixels may include deep trench isolation structures interposed between adjacent pairs of photodiodes. In order to maximize quantum efficiency, the array of pixels may include a reflective stack formed under the photodiodes and the deep trench isolation structures. The deep trench isolation structures may be formed from doped glass, doped polysilicon, or metal having a doped oxide liner. The reflective stack may include multiple layers of materials having different indices of refraction. The reflective stack may include oxide, nitride, and semiconductor layers. The deep trench isolation structures may extend from the top of the photodiodes down to the reflective stack. The deep trench isolation structures may have a 50 to 1 aspect ratio.