The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2017

Filed:

Mar. 30, 2015
Applicant:

Halliburton Energy Services, Inc., Houston, TX (US);

Inventor:

Zheng Chen, Kingwood, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03B 1/00 (2006.01); H03K 3/00 (2006.01); H03K 17/691 (2006.01); H03K 17/14 (2006.01); H03K 7/08 (2006.01); H03K 17/74 (2006.01); H02M 1/08 (2006.01);
U.S. Cl.
CPC ...
H03K 17/691 (2013.01); H03K 7/08 (2013.01); H03K 17/145 (2013.01); H03K 17/74 (2013.01); H02M 1/08 (2013.01);
Abstract

A pulse-transformer-based isolated gate driver circuit uses a small count of high-temperature-qualified components to drive a power semiconductor switch with asymmetrical voltage biases. A differential driver generates a pulse signal from a pulse-width-modulated signal, which is passed to a charge and lock circuit through a transformer. The charge and lock circuit includes an activation path and a deactivation path, which are selectively open to current flow based on positive or negative voltage pulses in the pulse signal, to selectively turn the main semiconductor switch on or off. The charge and lock circuit can lock voltage across the main semiconductor switch to keep the main semiconductor switch in an 'on' or and 'off' state.


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