The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2017

Filed:

Jan. 13, 2016
Applicant:

Peregrine Semiconductor Corporation, San Diego, CA (US);

Inventors:

Jianhua Lu, San Diego, CA (US);

Peter Bacon, Derry, NH (US);

Raul Inocencio Alidio, Carlsbad, CA (US);

Vikram Sekar, San Diego, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H03K 17/10 (2006.01); H03K 17/693 (2006.01); H04B 1/44 (2006.01);
U.S. Cl.
CPC ...
H03K 17/687 (2013.01); H03K 17/102 (2013.01); H03K 17/693 (2013.01); H04B 1/44 (2013.01);
Abstract

An RF switching device having distributed shunt switches distributed along transmission lines to improve RF bandwidth as well as the signal isolation of the device. The shunt switches may be physically positioned on both sides of the transmission lines to keep an integrated circuit (IC) design essentially symmetrical so as to provide predictable and reliable operational characteristics. Some embodiments include stacked FET shunt switches and series switches to tolerate high voltages. In some embodiments, the gate resistor for each FET shunt switch is divided into two or more portions.


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