The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2017

Filed:

Jan. 30, 2015
Applicant:

Skyworks Solutions, Inc., Woburn, MA (US);

Inventors:

Anuj Madan, Cambridge, MA (US);

Fikret Altunkilic, North Andover, MA (US);

Guillaume Alexandre Blin, Carlisle, MA (US);

Assignee:

Skyworks Solutions, Inc., Woburn, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H03K 17/16 (2006.01); H01L 21/77 (2017.01); H03K 17/06 (2006.01); H03K 17/693 (2006.01); H04B 1/48 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H03K 17/162 (2013.01); H01L 21/77 (2013.01); H01L 27/1203 (2013.01); H03K 17/063 (2013.01); H03K 17/687 (2013.01); H03K 17/693 (2013.01); H04B 1/48 (2013.01); H03K 2017/066 (2013.01); H03K 2217/0009 (2013.01); H03K 2217/0018 (2013.01); H03K 2217/0036 (2013.01);
Abstract

Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes at least one field-effect transistor (FET) disposed between a first node and a second node, each having a respective source, drain, gate, and body. The system includes a coupling circuit including a first path and a second path, the first path being between the respective source or the respective drain and the respective gate of the at least one FET, the second path being between the respective source or the respective drain and the respective body of the at least one FET. The coupling circuit may be configured to allow discharge of interface charge from either or both of the coupled gate and body.


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