The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2017

Filed:

Nov. 05, 2014
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Julien Arcamone, Grenoble, FR;

Gregory Arndt, Meylan, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/02 (2006.01); H03H 9/46 (2006.01); H03H 9/52 (2006.01);
U.S. Cl.
CPC ...
H03H 9/02259 (2013.01); H03H 9/02393 (2013.01); H03H 9/462 (2013.01); H03H 9/525 (2013.01); H03H 2009/02291 (2013.01);
Abstract

A MEMS/NEMS device having an adjustable frequency response comprises an array of electrostatically actuated resonators, an electrostatic actuation circuit, electrical detection means, and means adjusting the frequency response of the resonators. The device comprises resonators having a movable portion, electrically connected in series between a first biasing potential Vand a second biasing potential V, each resonator biased to a potential Vi between Vand V, depending on position in the series. The electrostatic actuation circuit comprises, for each resonator, an actuation electrode facing the movable portion, all electrodes being connected in parallel to a common control potential V, the actuation voltage of each resonator being equal to V−Vi. The detection means comprises a detection output common to all resonators, the output being connected to an output potential V. The means for adjusting the frequency response varies the common control potential and/or at least one of the biasing potentials.


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