The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
May. 29, 2015
Applicant:
Stmicroelectronics (Tours) Sas, Tours, FR;
Inventors:
Assignee:
STMICROELECTRONICS (TOURS) SAS, Tours, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 3/20 (2006.01); H01L 29/732 (2006.01); H01L 27/07 (2006.01); H01L 29/87 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H02H 3/20 (2013.01); H01L 27/0248 (2013.01); H01L 27/0629 (2013.01); H01L 27/0761 (2013.01); H01L 28/20 (2013.01); H01L 29/732 (2013.01); H01L 29/7322 (2013.01); H01L 29/7395 (2013.01); H01L 29/7827 (2013.01); H01L 29/87 (2013.01); H01L 29/872 (2013.01); H01L 27/0262 (2013.01);
Abstract
An integrated circuit includes a vertical Shockley diode and a first vertical transistor. The diode is formed by, from top to bottom of a semiconductor substrate, a first region of a first conductivity type, a substrate of a second conductivity type, and a second region of the first conductivity type having a third region of the second conductivity type formed therein. The vertical transistor is formed by, also from top to bottom, a portion of the second region and a fourth region of the second conductivity type. The third and fourth regions are electrically connected to each other.