The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2017

Filed:

Jul. 14, 2015
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Ayumi Fuchida, Tokyo, JP;

Naoki Nakamura, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/12 (2006.01); H01S 3/1055 (2006.01); H01S 3/067 (2006.01); H01S 5/183 (2006.01); H01S 5/20 (2006.01);
U.S. Cl.
CPC ...
H01S 5/12 (2013.01); H01S 3/0675 (2013.01); H01S 3/1055 (2013.01); H01S 5/1231 (2013.01); H01S 5/18319 (2013.01); H01S 5/20 (2013.01);
Abstract

A semiconductor optical element has a semiconductor substrate, a diffraction grating, a diffraction grating embedding layer, an active layer and a cladding layer. The diffraction grating includes a plurality of grating elements arranged on the semiconductor substrate along a direction (Z direction) in which laser light is emitted. Each grating element has a lower portion and an upper portion provided on the lower portion. The lower portions of the grating elements are connected to each other to form one layer in a lower section of the diffraction grating. The upper portion has a first refractive index and the lower portion has a second refractive index. A refractive index of the diffraction grating embedding layer is an intermediate value between the first and the second refractive index.


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