The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Sep. 25, 2013
Applicant:
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Inventors:
Werner Bergbauer, Windberg, DE;
Philipp Drechsel, Regensburg, DE;
Peter Stauss, Regensburg, DE;
Patrick Rode, Regensburg, DE;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 33/02 (2010.01);
U.S. Cl.
CPC ...
H01L 33/325 (2013.01); H01L 21/0254 (2013.01); H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/02488 (2013.01); H01L 21/02505 (2013.01); H01L 33/007 (2013.01); H01L 33/025 (2013.01); H01L 33/12 (2013.01); H01L 33/32 (2013.01);
Abstract
An optoelectronic component includes a layer structure which has a first gallium nitride layer and an aluminum-containing nitride intermediate layer. In this case, the aluminum-containing nitride intermediate layer adjoins the first gallium nitride layer. The layer structure has an undoped second gallium nitride layer which adjoins the aluminum-containing nitride intermediate layer.