The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Nov. 13, 2014
Applicant:
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Inventors:
Ivar Tångring, Regensburg, DE;
Petrus Sundgren, Lappersdorf, DE;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/04 (2010.01); H01L 33/02 (2010.01); H01L 33/30 (2010.01); H01L 33/44 (2010.01); H01L 33/36 (2010.01); H01L 33/58 (2010.01); H01L 33/60 (2010.01); H01L 33/62 (2010.01); H01L 33/50 (2010.01); H01L 33/06 (2010.01);
U.S. Cl.
CPC ...
H01L 33/04 (2013.01); H01L 33/02 (2013.01); H01L 33/30 (2013.01); H01L 33/36 (2013.01); H01L 33/44 (2013.01); H01L 33/58 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 33/06 (2013.01); H01L 33/50 (2013.01);
Abstract
A radiation-emitting semiconductor device includes a semiconductor body with a semiconductor layer sequence, wherein the semiconductor layer sequence has an active region that generates radiation having a peak wavelength in the near-infrared spectral range and an absorptive region, and the absorption region at least partially absorbs a shortwave radiation component having a cut-off wavelength shorter than the peak wavelength.