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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9685559 B1

PDFFull Text
Expired
Date of Patent:
Jun. 20, 2017

Filed:

Dec. 20, 2013

Vertically stacked heterostructures including graphene

Applicant:

The Regents of the University of California, Oakland, CA (US);

Inventors:

Xiangfeng Duan, Los Angeles, CA (US);

Woojong Yu, Los Angeles, CA (US);

Yuan Liu, Los Angeles, CA (US);

Yu Huang, Los Angeles, CA (US);

Assignee:

THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);

Attorneys:

Foley & Lardner LLP

Cliff Z. Liu

Primary Examiner:

Fernando L Toledo

Assistant Examiner:

Neil Prasad

Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 31/113 (2006.01); H01L 31/032 (2006.01); H01L 31/0224 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 29/1606 (2013.01); H01L 29/41733 (2013.01); H01L 29/41775 (2013.01); H01L 29/45 (2013.01); H01L 29/66742 (2013.01); H01L 29/66969 (2013.01); H01L 29/78642 (2013.01); H01L 29/78681 (2013.01); H01L 29/78684 (2013.01); H01L 29/78693 (2013.01); H01L 29/78696 (2013.01); H01L 31/022408 (2013.01); H01L 31/032 (2013.01); H01L 31/113 (2013.01);
Abstract

A vertically stacked heterostructure device includes: (1) a substrate; and (2) vertically stacked layers disposed over the substrate and including (a) a source electrode including a layer of graphene; (b) a drain electrode; and (c) a semiconducting channel disposed between the source electrode and the drain electrode. During operation of the device, a current is configured to flow between the source electrode and the drain electrode through the semiconducting channel.

Find Patent Forward Citations

Duan, Xiangfeng. (2017). Vertically stacked heterostructures including graphene (U.S. Patent No. 9685559). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9685559

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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