The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Dec. 12, 2013
Panasonic Corporation, Osaka, JP;
Hideyuki Okita, Toyama, JP;
Yasuhiro Uemoto, Toyama, JP;
Masahiro Hikita, Toyama, JP;
Hidenori Takeda, Mie, JP;
Takahiro Sato, Toyama, JP;
Akihiko Nishio, Ishikawa, JP;
Abstract
A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer () located over the substrate; a second nitride semiconductor layer () located over the first nitride semiconductor layer (), having a larger band gap than the first nitride semiconductor layer (), and having a recess () penetrating into the first nitride semiconductor layer (); and a third nitride semiconductor layer () continuously covering the second nitride semiconductor layer () and the recess (), and having a larger band gap than the first nitride semiconductor layer (); a gate electrode () located above a portion of the third nitride semiconductor layer () over the recess (); and a first ohmic electrode () and a second ohmic electrode () located on opposite sides of the gate electrode ().