The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Sep. 15, 2016
Applicant:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Inventor:
Ken Nakata, Yokohama, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 29/66462 (2013.01); H01L 29/778 (2013.01); H01L 29/7783 (2013.01); H01L 29/7786 (2013.01);
Abstract
A HEMT made of nitride semiconductor materials is disclosed. The HEMT includes the GaN channel layer, the InAlN barrier layer, and the n-type GaN regions formed beneath the source electrode and the drain electrode at a temperature such that the InAlN barrier layer in the crystal quality thereof is not degraded, lower than 800° C. The n-type GaN regions are doped with silicon (Si) and have a ratio of silicon atoms against carbon atoms (Si/C) greater than 100.