The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Nov. 25, 2015
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Naveen Tipirneni, Plano, TX (US);
Sameer Pendharkar, Allen, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); H01L 29/0646 (2013.01); H01L 29/0653 (2013.01); H01L 29/2003 (2013.01);
Abstract
A semiconductor device with a substrate, a low defect layer formed in a fixed position relative to the substrate, and a barrier layer comprising III-N semiconductor material formed on the low-defect layer and forming an electron gas in the low-defect layer. The device also has a source contact, a drain contact, and a gate contact for receiving a potential, the potential for adjusting a conductive path in the electron gas and between the source contact and the drain contact. Lastly, the device has a one-sided PN junction between the barrier layer and the substrate.