The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Jun. 23, 2016
Applicant:
SK Hynix Inc., Icheon, KR;
Inventor:
Kang Yoo Song, Seongnam, KR;
Assignee:
SK HYNIX INC., Icheon, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/45 (2006.01); H01L 21/306 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/265 (2006.01); H01L 21/762 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 21/311 (2006.01); H01L 21/3205 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/26506 (2013.01); H01L 21/26513 (2013.01); H01L 21/28026 (2013.01); H01L 21/28525 (2013.01); H01L 21/30604 (2013.01); H01L 21/31111 (2013.01); H01L 21/32055 (2013.01); H01L 21/76224 (2013.01); H01L 29/0649 (2013.01); H01L 29/4175 (2013.01); H01L 29/41791 (2013.01); H01L 29/4236 (2013.01); H01L 29/456 (2013.01); H01L 29/785 (2013.01); H01L 21/3083 (2013.01);
Abstract
A semiconductor device includes an active region with a first gate trench formed when a gate region is etched to a first depth, a device isolation film defining the active region and including a second gate-trench formed when a gate region is etched to a second depth, a gate buried below the first gate trench and the second gate trench, and a source plug and a drain plug formed when a conductive material is deposited in a source region and a drain region of the active region.
Song, Kang. (2017). Semiconductor device having a gate that is buried in an active region and a device isolation film (U.S. Patent No. 9685540). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9685540
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile