The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Feb. 17, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventor:
Choong-Rae Cho, Hwaseong-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 21/285 (2006.01); H01L 21/225 (2006.01); H01L 21/265 (2006.01); H01L 29/423 (2006.01); H01L 21/768 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 29/665 (2013.01); H01L 21/2254 (2013.01); H01L 21/26513 (2013.01); H01L 21/28518 (2013.01); H01L 21/76843 (2013.01); H01L 21/76855 (2013.01); H01L 29/4236 (2013.01); H01L 27/10855 (2013.01);
Abstract
A method of forming a metal silicide layer can include implanting dopants to a first depth below a surface of a semiconductor substrate including an active area. A metal-silicon composite layer can be formed on the semiconductor substrate and the metal-silicon composite layer can be silicided to form the metal silicide layer on the active area.