The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Feb. 12, 2014
International Business Machines Corporation, Armonk, NY (US);
Karl R. Erickson, Rochester, MN (US);
Phil C. Paone, Rochester, MN (US);
David P. Paulsen, Dodge Center, MN (US);
John E. Sheets, II, Zumbrota, MN (US);
Gregory J. Uhlmann, Rochester, MN (US);
Kelly L. Williams, Austin, TX (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of making a semiconductor device in a gate first process with side gate assists. A first gate may be formed within a gate region. The first gate may include a first gate conductor separated from a semiconductor substrate by a first insulator disposed between the first gate conductor and the semiconductor substrate. A second gate may be formed within the gate region. The second gate may include a second gate conductor separated from a vertical surface of the first gate conductor and the semiconductor substrate by a second insulator. A first electrical contact and a second electrical contact may be formed. The first and second electrical contacts may be disposed on opposite ends of the gate region for respectively connecting the first gate conductor and the second gate conductor to a respective voltage.