The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Jun. 05, 2015
Applicant:
Renesas Electronics Corporation, Kanagawa, JP;
Inventor:
Ryohei Kitao, Kanagawa, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/16 (2006.01); H01L 29/45 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41741 (2013.01); H01L 21/823475 (2013.01); H01L 29/0696 (2013.01); H01L 29/16 (2013.01); H01L 29/4236 (2013.01); H01L 29/45 (2013.01); H01L 27/088 (2013.01);
Abstract
A silicon substrate is restrained from being warped. A substrate is formed by use of a silicon substrate. The substrate has a first surface and a second surface opposite to each other. A metal film is formed over the first surface. An interconnection layer is formed over the second surface. The metal film has a face centered cubic lattice structure. When the metal film is measured by XRD (X-ray diffraction), the [111] orientation intensity A(111), the [220] orientation intensity A(220) and the [311] orientation intensity A(311) of the metal film satisfy the following: A(111)/{A(220)+A(311)}≧10.