The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Mar. 13, 2015
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Hyeonjin Shin, Suwon-si, KR;
Sangwoo Kim, Yongin-si, KR;
Kanghyuck Lee, Suwon-si, KR;
Hyejung Park, Seoul, KR;
Eunbi Cho, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Research and Business Foundation Sungkyunkwan University, Gyeonggi-do, KR;
Abstract
Example embodiments relate to an electronic device having a graphene-semiconductor multi-junction and a method of manufacturing the electronic device. The electronic device includes a graphene layer having at least one graphene protrusion and a semiconductor layer that covers the graphene layer. A side surface of each of the at least one graphene protrusion may be uneven, may have a multi-edge, and may be a stepped side surface. The graphene layer includes a plurality of nanocrystal graphenes. The graphene layer includes a lower graphene layer having a plurality of nanocrystal graphenes and the at least one graphene protrusion that is formed on the lower graphene layer. The semiconductor layer may include a transition metal dichalcogenide (TMDC) layer. Each of the at least one graphene protrusion may include a plurality of nanocrystal graphenes.