The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2017

Filed:

Sep. 08, 2015
Applicant:

Stmicroelectronics (Crolles 2) Sas, Crolles, FR;

Inventors:

Francois Guyader, Montbonnot, FR;

Jean-Pierre Oddou, Champagnier, FR;

Stephane Allegret-Maret, Grenoble, FR;

Mickael Gros-Jean, Grenoble, FR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0232 (2014.01); H01L 27/146 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14636 (2013.01); H01L 27/1203 (2013.01); H01L 27/1462 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14623 (2013.01); H01L 27/14629 (2013.01);
Abstract

A back-illuminated integrated imaging device is formed from a semiconductor substrate including a zone of pixels bounded by capacitive deep trench isolations. A peripheral zone is located outside the zone of pixels. A continuous electrically conductive layer forms, in the zone of pixels, an electrode in a trench for each capacitive deep trench isolation, and forms, in the peripheral zone, a redistribution layer for electrically coupling the electrode to a biasing contact pad. The electrode is located in the trench between a trench dielectric and at least one material for filling the trench.


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