The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2017

Filed:

Apr. 03, 2015
Applicant:

Apple Inc., Cupertino, CA (US);

Inventors:

Jungbae Kim, San Jose, CA (US);

Kyung-Wook Kim, Cupertino, CA (US);

Shih Chang Chang, Cupertino, CA;

Ting-Kuo Chang, Cupertino, CA (US);

Ton-Yong Wang, Fremont, CA (US);

Assignee:

Apple Inc., Cupertino, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/136 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 27/32 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 29/49 (2006.01); G02F 1/1345 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1248 (2013.01); G02F 1/1362 (2013.01); G02F 1/13454 (2013.01); H01L 21/26513 (2013.01); H01L 27/1259 (2013.01); H01L 27/3262 (2013.01); H01L 29/4916 (2013.01); H01L 29/66757 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78675 (2013.01);
Abstract

A display may have an array of pixels controlled by display driver circuitry. The pixels may have pixel circuits. In liquid crystal display configurations, each pixel circuit may have an electrode that applies electric fields to an associated portion of a liquid crystal layer. In organic light-emitting diode displays, each pixel circuit may have a drive transistor that applies current to an organic light-emitting diode in the pixel circuit. The pixel circuits and display driver circuitry may have thin-film transistor circuitry that includes transistor such as silicon transistors and semiconducting-oxide transistors. Semiconducting-oxide transistors and silicon transistors may be formed on a common substrate. Semiconducting-oxide transistors may have polysilicon layers with doped regions that serve as gates. Semiconducting-oxide channel regions overlap the gates. Transparent conductive oxide and metal may be used to form source-drain terminals that are coupled to opposing edges of the semiconducting oxide channel regions.


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