The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Jul. 06, 2012
Martin Knaipp, Unterpremstätten, AT;
Martin Knaipp, Unterpremstätten, AT;
AMS AG, Unterpremstaetten, AT;
Abstract
The high-voltage transistor device has a p-type semiconductor substrate that is furnished with a p-type epitaxial layer. A well and a body region are located in the epitaxial layer. A source region is arranged in the body region, and a drain region is arranged in the well. A channel region is located in the body region between the well and the source region. A gate electrode is arranged above the channel region. In the part of the semiconductor substrate and the epitaxial layer underneath the source region and the channel region, a deep body region is present, which has a higher dopant concentration in comparison to the remainder of the semiconductor substrate.