The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Jan. 04, 2016
Applicant:
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Assignee:
ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED, Sunnyvale, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H02M 1/34 (2007.01); H01L 27/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/8605 (2006.01); H01L 29/40 (2006.01); H01L 49/02 (2006.01); H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 28/20 (2013.01); H01L 29/407 (2013.01); H01L 29/66181 (2013.01); H01L 29/66666 (2013.01); H01L 29/7803 (2013.01); H01L 29/7813 (2013.01); H01L 29/8605 (2013.01); H02M 1/34 (2013.01); H01L 29/7811 (2013.01); H01L 29/94 (2013.01); H02M 2001/348 (2013.01);
Abstract
Aspects of the present disclosure describe MOSFET devices that have snubber circuits. The snubber circuits comprise one or more resistors with a dynamically controllable resistance that is controlled by changes to a gate and/or drain potentials of the one or more MOSFET structures during switching events.