The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Sep. 24, 2015
Applicant:
Samsung Display Co., Ltd., Yongin-Si, Gyeonggi-do, KR;
Inventors:
Assignee:
Samsung Display Co., Ltd., Yongin-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); H01L 27/32 (2006.01); H01L 27/12 (2006.01); H01L 21/266 (2006.01); H01L 21/311 (2006.01); H01L 49/02 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02532 (2013.01); H01L 21/02422 (2013.01); H01L 21/02488 (2013.01); H01L 21/02592 (2013.01); H01L 21/02595 (2013.01); H01L 21/02667 (2013.01); H01L 21/02678 (2013.01); H01L 21/02686 (2013.01); H01L 21/266 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 27/1255 (2013.01); H01L 27/1274 (2013.01); H01L 27/1285 (2013.01); H01L 27/1288 (2013.01); H01L 27/3244 (2013.01); H01L 27/3265 (2013.01); H01L 28/60 (2013.01); H01L 29/66757 (2013.01); H01L 2227/323 (2013.01);
Abstract
A method of manufacturing a polysilicon (poly-Si) layer, a method of manufacturing an organic light-emitting display apparatus using the method, and an organic light-emitting display apparatus manufactured by using the method. The method includes forming an amorphous silicon (a-Si) layer on a substrate having first and second areas, thermally treating the a-Si layer to partially crystallize the a-Si layer into a partially crystallized Si layer, removing a thermal oxide layer through a thermal treatment, selectively irradiating the first areas with laser beams to crystallize the partially crystallized Si layer.