The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Mar. 09, 2016
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Masaya Terai, Kawasaki, JP;
Shigeki Hattori, Kawasaki, JP;
Hideyuki Nishizawa, Toshima, JP;
Koji Asakawa, Kawasaki, JP;
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); G11C 11/56 (2006.01); H01L 51/05 (2006.01); H01L 27/11582 (2017.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02282 (2013.01); G11C 11/5664 (2013.01); H01L 21/02118 (2013.01); H01L 21/28282 (2013.01); H01L 51/0591 (2013.01); H01L 27/11582 (2013.01); H01L 51/0077 (2013.01);
Abstract
A semiconductor memory device in an embodiment includes a semiconductor layer, a control gate electrode, an organic molecular layer provided between the semiconductor layer and the control gate electrode, and a first insulating layer provided between the organic molecular layer and the semiconductor layer, the first insulating layer having a first layer containing alkyl chains and a second layer containing siloxane, the second layer being provided between the first layer and the organic molecular layer.